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A III-nitride Layered Barrier Structure for Hyperspectral Imaging Applications
- Source :
- MRS Proceedings. 1167
- Publication Year :
- 2009
- Publisher :
- Springer Science and Business Media LLC, 2009.
-
Abstract
- We report on a novel photodetector structure based on III-nitride materials. A layered configuration is used to create a barrier with voltage-tunable height. The barrier is used as a filter on photoexcited holes and electrons, and could form the basis for a dynamically tunable pixel in a hyperspectral imaging array. This would eliminate the need for external gratings and filters used in conventional hyperspectral instruments; in addition, the tunability of pixels allows decrease of the array dimension by one. The III-nitride materials family is a good candidate for this device, combining large band offsets with the ability for epitaxial growth. We have demonstrated the feasibility of using III-nitride materials to fabricate layered tunnel barriers, and have demonstrated tunability of photodetection using these structures. External quantum efficiencies of > 12% have been achieved with prototype devices.
Details
- ISSN :
- 19464274 and 02729172
- Volume :
- 1167
- Database :
- OpenAIRE
- Journal :
- MRS Proceedings
- Accession number :
- edsair.doi...........7d6e601b83a5acda50c3d51363778187