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Growth of the active zone in nitride based long wavelength laser structures

Authors :
Andreas Hangleiter
Torsten Langer
Uwe Rossow
Heiko Bremers
A. D. Dräger
L. Hoffmann
H. Jönen
Moritz Brendel
Source :
Journal of Crystal Growth. 315:250-253
Publication Year :
2011
Publisher :
Elsevier BV, 2011.

Abstract

In x Ga 1―x N/GaN quantum well (QW) structures grown on c-plane surfaces for long wavelength light emitters have been investigated intended. We reached indium concentrations of x In ≥ 0.35 with good optical and structural quality. For QW thicknesses d QW ≤ 2 nm a fully strained layer structure is observed. QWs of such high indium concentrations, however, are very sensitive to the growth conditions of the subsequent layers and thermal stability/degradation becomes an important issue. We modified the growth of the QWs to avoid or minimize V-pit formation without temperature ramping in the barriers and showed that their properties were unchanged when used in the active zone of a laser structure.

Details

ISSN :
00220248
Volume :
315
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi...........7dda23b18a34179ed18361d163aa59f6