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Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals

Authors :
Hong-Liang Lu
Pengfei Wang
Hong-Yan Gou
Qing-Qing Sun
David Wei Zhang
Shi-Jin Ding
Peng Zhou
Lin Chen
Source :
IEEE Electron Device Letters. 32:794-796
Publication Year :
2011
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2011.

Abstract

Resistive switching behaviors of Al2O3-based memory devices with and without ruthenium nanocrystals (RuNCs) fabricated by atomic layer deposition are investigated for nonvolatile-memory applications. Large resistance ratios (>; 105) of high- to low-resistance states were observed with nanocrystals contribution. Moreover, improvements of stability device yield and retention performance were also achieved by embedding RuNCs. Therefore, the Al2O3-based resistive memory device composed of embedded nanocrystals is a possible solution for future integrated standalone storage class memory processes.

Details

ISSN :
15580563 and 07413106
Volume :
32
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........7e0230bc0d4870d19823700f855d3c73