Back to Search
Start Over
Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals
- Source :
- IEEE Electron Device Letters. 32:794-796
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- Resistive switching behaviors of Al2O3-based memory devices with and without ruthenium nanocrystals (RuNCs) fabricated by atomic layer deposition are investigated for nonvolatile-memory applications. Large resistance ratios (>; 105) of high- to low-resistance states were observed with nanocrystals contribution. Moreover, improvements of stability device yield and retention performance were also achieved by embedding RuNCs. Therefore, the Al2O3-based resistive memory device composed of embedded nanocrystals is a possible solution for future integrated standalone storage class memory processes.
- Subjects :
- Materials science
Yield (engineering)
chemistry.chemical_element
Nanotechnology
Integrated circuit
Electronic, Optical and Magnetic Materials
law.invention
Resistive random-access memory
Ruthenium
Non-volatile memory
Atomic layer deposition
chemistry
Nanocrystal
law
Electrical and Electronic Engineering
Resistor
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........7e0230bc0d4870d19823700f855d3c73