Ultralow‐energy focused electron beam induced deposition

We have studied focused electron beam induced deposition from W(CO)6 at beam primary energies between 20 and 0.06 keV. Submicrometer resolution with 4 nA beam current was maintained at very low primary energies using a retarding field configuration. Decomposition cross sections of W(CO)6 for primary energies below about 1 keV were found to be about a factor of 4 larger than those at 20 keV. Depending on the scan conditions, the resistivity of the deposits formed using low primary energies was found to be up to about a factor of 4 lower than at 20 keV implying a higher metallic content. These results form the basis of an improved method for repairing clear defects on x‐ray masks and for making conducting tracks on semiconducting materials.