Electrical Characteristics of High Mobility Si/Si 0.5 Ge 0.5 /SOI Quantum-Well p-MOSFETs with a Gate Length of 100 nm and an Equivalent Oxide Thickness of 1.1 nm

Short-channel high-mobility Si/Si0.5Ge0.5/silicon-on-insulator (SOI) quantum-well p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated and electrically characterized. The transistors show good transfer and output characteristics with Ion/Ioff ratio up to 105 and sub-threshold slope down to 100mV/dec. HfO2/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved. The effective hole mobility of the transistors reaches 200cm2/V?s, which is 2.12 times the Si universal hole mobility.