Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure

Authors :: Yang Qinghui
Zhi Chen
Dong-Hong Qiu
Wen Qiye
Zhang Huaiwu
Yulan Jing
Source :: 2013 6th UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT).
Publication Year :: 2013
Publisher :: IEEE, 2013.
Abstract: We report the growth of vanadium dioxide (VO2) films on metal electrode with a thin SiO2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.

Subjects :: Fabrication
Materials science
business.industry
Orders of magnitude (temperature)
Oxide
Threshold voltage
Metal
chemistry.chemical_compound
Nanoelectronics
chemistry
visual_art
visual_art.visual_art_medium
Optoelectronics
sense organs
Thin film
Metal–insulator transition
business

Database :: OpenAIRE
Journal :: 2013 6th UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT)
Accession number :: edsair.doi...........7ed3bcb8aa82e9880e03e1855d420d8b
Full Text :: https://doi.org/10.1109/ucmmt.2013.6641563

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