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Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs
- Source :
- Solid-State Electronics. 115:33-38
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2–3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).
- Subjects :
- 010302 applied physics
Physics
Noise power
Noise spectral density
Shot noise
Spectral density
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Noise (electronics)
Electronic, Optical and Magnetic Materials
Computational physics
Orders of magnitude (time)
0103 physical sciences
MOSFET
Materials Chemistry
Electronic engineering
Flicker noise
Electrical and Electronic Engineering
0210 nano-technology
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 115
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........7edcc592aa92b0c30ca4a3d77c5ea025