High Temperature Inverter for Airborne Application

Authors :: Damien Risaletto
Hervé Morel
Remi Robutel
Régis Meuret
Dominique Bergogne
Fabien Dubois
Sonia Dhokkar
Source :: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2010:000222-000227
Publication Year :: 2010
Publisher :: IMAPS - International Microelectronics Assembly and Packaging Society, 2010.
Abstract: This paper reports the design, fabrication and experimental performance of a 2kW, 20kHz, High Temperature, three-phase, all-SiC JFET Voltage Source Inverter (VSI). The inverter includes a specific JFET driver and a DC-link capacitor. All these elements have been validated over a wide temperature range, between 25°C and 200°C. The power device used, a 1200V, 15A, JFET from SiCED has been characterized up to 200°C. An innovative reliable protection circuit for normally-on devices is also presented and validated.

Subjects :: Fabrication
Materials science
business.industry
Electrical engineering
JFET
Atmospheric temperature range
law.invention
Power (physics)
Capacitor
law
Electronic engineering
Gate driver
Inverter
Pharmacology (medical)
business
Voltage source inverter

ISSN :: 23804491
Volume :: 2010
Database :: OpenAIRE
Journal :: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)
Accession number :: edsair.doi...........7ef6e1a97da2cbd528beb7083883a74c
Full Text :: https://doi.org/10.4071/hitec-fdubois-wa23