Back to Search
Start Over
Statistical simulation of IC technology: A bipolar process example
- Source :
- Microelectronics Reliability. 36:1191-1205
- Publication Year :
- 1996
- Publisher :
- Elsevier BV, 1996.
-
Abstract
- Statistical simulation using design of experiments has been employed for integrated circuit technology development. A software program called STADIUM was developed to implement this statistical methodology. The software has been designed to be user friendly and to guide the engineer who is not a statistics expert through the process of deriving a valid statistical answer. Inputs to the STADIUM system include integrated circuit fabrication variations and when coupled with semiconductor process and device simulators can estimate the expected variations of device parameters such as transistor gain and threshold voltage. This paper presents the detailed procedure and results of a statistical simulation of a bipolar transistor technology.
- Subjects :
- Engineering
business.industry
Semiconductor device fabrication
Design of experiments
Bipolar junction transistor
Transistor
Process (computing)
Integrated circuit
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Software
law
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Electrical and Electronic Engineering
User interface
Safety, Risk, Reliability and Quality
business
Simulation
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 36
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........7f085d6eabbe42386278f2a7b8885b30
- Full Text :
- https://doi.org/10.1016/0026-2714(95)00078-x