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Temperature scaling of electromigration threshold product in Cu/low-K interconnects

Authors :
L. Doyen
E. Petitprez
D. Ney
Source :
2009 IEEE International Reliability Physics Symposium.
Publication Year :
2009
Publisher :
IEEE, 2009.

Abstract

In this paper, we report on the temperature dependence of electromigration threshold product in copper interconnects. The electromigration threshold product (jL) c is first determined from lifetime distributions for temperatures ranging from 260°C to 330°C. We then propose an alternative method to determine (jL) c at much lower temperatures. We show that the threshold product does not vary significantly in the investigated temperature range. We demonstrate this alternative method is suitable to determine (jL) c close to the final product operating temperature, which would require unrealistic test duration if performed with a conventional method based on lifetime data.

Details

Database :
OpenAIRE
Journal :
2009 IEEE International Reliability Physics Symposium
Accession number :
edsair.doi...........7f0b645a44b5c373a4206efbcedf2ffa
Full Text :
https://doi.org/10.1109/irps.2009.5173368