Transfer Characteristics of CMOS Inverter using 'Steep SS PN-Body Tied SOI-FET'

We report for the first time the measured transfer characteristics of CMOS inverter using the steep subthreshold slope (SS) PN-Body Tied (PNBT) SOI-FET. When the position of SS of both NMOS and PMOS are overlapped, it shows a surprisingly very steep, ideally right angle, transfer characteristic, compared with the case of the conventional SOI-CMOS. It is an interesting finding when using the real ideally steep SS device, such as PNBT SOI-FET.