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High-Power InGaAs/InAlAs Schottky Photodiode with Low Amplitude-to-Phase Noise Conversion

Authors :
N. A. Valisheva
M. S. Aksenov
A. M. Gilinsky
A. Chizh
A. I. Toropov
K. Mikitchuk
Sergei Malyshev
Dmitriy V. Dmitriev
I. B. Chistokhin
K. S. Zhuravlev
Source :
2018 International Topical Meeting on Microwave Photonics (MWP).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

In the paper, high-power InGaAs/InAlAs Schottky photodiode with low amplitude-to-phase noise conversion is presented. It is shown that photodiode cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz. Amplitude-to-phase noise conversion coefficient of the proposed photodiode is demonstrated to be less than 1.5 rad/W at the frequency of 20 GHz

Details

Database :
OpenAIRE
Journal :
2018 International Topical Meeting on Microwave Photonics (MWP)
Accession number :
edsair.doi...........7f6ac1aa6e0e34071fac154b19a36324
Full Text :
https://doi.org/10.1109/mwp.2018.8552861