The effect of AlN buffer layer morphology on the structural quality of a semipolar GaN layer grown on a Si(001) substrate, according to transmission electron microscopy data

Structural features of the interface between a semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7 were studied by high-resolution transmission electron microscopy. The effect of interface morphology on the structural quality of the gallium nitride layer was revealed: faceted structure of the buffer layer surface reduces the threading dislocations density. Keywords: semipolar GaN, transmission electron microscopy, dislocation, Si(001) substrate