Preparation of Ge1-yCy Alloys by C Implantation into Ge Crystal and Their Raman Spectra

We attempted to prepare Ge1-y C y alloys by implantation of C atoms into Ge crystals and post-annealing. For samples annealed at temperatures higher than 450°C, X-ray diffraction (XRD) spectra indicated that the Ge1-y C y alloys were successfully prepared. The highest substitutional C content was about 1 at.%. The optimum annealing temperature to incorporate C atoms into the substitutional sites was 450–500°C. We also investigated the dependence of the Raman intensity of the Ge–C local mode on the substitutional C content. The intensity of the Ge–C local mode was found to increase in proportion to the substitutional C content. Furthermore, the relationship between Ge–C peak intensity and substitutional C content was relatively in good agreement with that theoretically predicted.