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Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Details

ISSN :
10773118 and 00036951
Volume :
119
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........804b7a2e4904f945ea2c7d84590ea79f
Full Text :
https://doi.org/10.1063/5.0075466