Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31 μm to 1.55 μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 μm to 1.5 μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31 μm.