Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal—semiconductor—metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

A two-dimensional model of a 4H-SiC metal?semiconductor?metal (MSM) ultraviolet photodetector has been established using a self-consistent numerical calculation method. The structure-dependent spectral response of a 4H-SiC MSM detector is calculated by solving Poisson's equation, the current continuity equation and the current density equation. The calculated results are verified with experimental data. With consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode heights (H), spacings (S) and widths (W) reveals conclusive results in device design. The mechanisms responsible for variations of responsivity with those parameters are analyzed. The findings show that responsivity is inversely proportional to electrode height and is enhanced with an increase of electrode spacing and width. In addition, the ultraviolet (UV)-to-visible rejection ratio is > 103. By optimizing the device structure at 10 V bias, a responsivity as high as 180.056 mA/W, a comparable quantum efficiency of 77.93% and a maximum UV-to-visible rejection ratio of 1875 are achieved with a detector size of H = 50 nm, S = 9 ?m and W = 3 ?m.