A large signal non-quasi-static MOS model for RF circuit simulation

Authors :: P.W.H. de Vreede
A.J. Scholten
L.F. Tiemeijer
D.B.M. Klaassen
Source :: International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Publication Year :: 2003
Publisher :: IEEE, 2003.
Abstract: A large-signal non-quasi-static (NQS) model for RF CMOS circuit simulation is presented that can be built from channel segments described by conventional QS models like BSIM3 or MOS Model 9. This large-signal NQS model is shown to give a very accurate prediction of the high-frequency behaviour of the intrinsic transconductance, the power gain and input resistance.

Subjects :: Power gain
Engineering
business.industry
Transconductance
NQS
Integrated circuit
Hybrid-pi model
law.invention
CMOS
law
Hardware_INTEGRATEDCIRCUITS
Electronic engineering
Equivalent circuit
business
Linear circuit

Database :: OpenAIRE
Journal :: International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)
Accession number :: edsair.doi...........80a81469e4faa7c4546fc4a04e629ccf

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