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Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Source :
- Japanese Journal of Applied Physics. 52:06GE01
- Publication Year :
- 2013
- Publisher :
- IOP Publishing, 2013.
-
Abstract
- Polycrystalline silicon (poly-Si) fin-channel tri-gate (TG)- and double-gate (DG)-type flash memories with a thin n+-poly-Si floating gate (FG) and different control-gate (CG) lengths (L CG's) from 76 to 256 nm have been fabricated and their electrical characteristics including statistical threshold voltage (V t) and subthreshold slope (S-slope) have been comparatively investigated before and after one program/erase (P/E) cycle. It was experimentally found that better short-channel effect (SCE) immunity, a smaller V t variation, and a higher program speed are obtained in TG-type flash memories than in DG-type memories. The higher performance of TG-type flash memories is contributed by the additional top gate and recessed bottom silicon dioxide (SiO2) regions, which strengthen the controllability of the channel potential and increase the coupling ratio of the FG to the CG. Therefore, the developed poly-Si fin-channel TG structure is expected to be very useful for the fabrication of high-density and low-cost flash memories.
- Subjects :
- Hardware_MEMORYSTRUCTURES
Fabrication
Materials science
business.industry
Silicon dioxide
General Engineering
General Physics and Astronomy
engineering.material
Subthreshold slope
Fin (extended surface)
Flash (photography)
chemistry.chemical_compound
Polycrystalline silicon
chemistry
engineering
Optoelectronics
business
Voltage
Communication channel
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........8106256e4a7ececdec686fff12a0bf9f
- Full Text :
- https://doi.org/10.7567/jjap.52.06ge01