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Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy
- Source :
- Journal of Applied Physics. 110:114317
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.
- Subjects :
- Materials science
Condensed matter physics
business.industry
Band gap
Scanning tunneling spectroscopy
General Physics and Astronomy
Epitaxy
law.invention
law
Quantum dot
Transmission electron microscopy
Optoelectronics
Scanning tunneling microscope
business
Wurtzite crystal structure
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 110
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........81763f13fe08be263454ed5b8a3f441f