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Tunable Electrical Properties in High-Valent Transition-Metal-Doped ZnO Thin-Film Transistors

Tunable Electrical Properties in High-Valent Transition-Metal-Doped ZnO Thin-Film Transistors

Authors :
Jingli Wang
Jinchai Li
Xiangheng Xiao
Wei Chen
Lei Xu
Changzhong Jiang
Yueli Liu
Lei Liao
Zhe Li
Xingqiang Liu
Source :
IEEE Electron Device Letters. 35:759-761
Publication Year :
2014
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2014.

Abstract

High-valent transition-metal (Ti or Mo)-doped ZnO thin-film transistors (TFTs) were fabricated using radiofrequency magnetron sputtering at 150 °C. When the Ti or Mo was doped in the ZnO channel, device characteristics, such as threshold voltage, were modulated and field effect mobility could be enhanced. The device stability of the TFTs with a low Mo content was dramatically improved, which can be attributed to the incorporation of Mo suppressed the generation of oxygen vacancies in the ZnO active channel layer. These results indicate that high-valent transition-metal-doped ZnO TFTs strongly sustain further investigation for their applicability as alternative channel materials.

Details

ISSN :
15580563 and 07413106
Volume :
35
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........818c8be186d42b776bb2c1d291f58e7c
Full Text :
https://doi.org/10.1109/led.2014.2320520