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Tunable Electrical Properties in High-Valent Transition-Metal-Doped ZnO Thin-Film Transistors
Tunable Electrical Properties in High-Valent Transition-Metal-Doped ZnO Thin-Film Transistors
- Source :
- IEEE Electron Device Letters. 35:759-761
- Publication Year :
- 2014
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2014.
-
Abstract
- High-valent transition-metal (Ti or Mo)-doped ZnO thin-film transistors (TFTs) were fabricated using radiofrequency magnetron sputtering at 150 °C. When the Ti or Mo was doped in the ZnO channel, device characteristics, such as threshold voltage, were modulated and field effect mobility could be enhanced. The device stability of the TFTs with a low Mo content was dramatically improved, which can be attributed to the incorporation of Mo suppressed the generation of oxygen vacancies in the ZnO active channel layer. These results indicate that high-valent transition-metal-doped ZnO TFTs strongly sustain further investigation for their applicability as alternative channel materials.
- Subjects :
- Materials science
business.industry
Transistor
Doping
Field effect
Sputter deposition
Electronic, Optical and Magnetic Materials
law.invention
Threshold voltage
Transition metal
Thin-film transistor
law
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
business
Layer (electronics)
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 35
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........818c8be186d42b776bb2c1d291f58e7c
- Full Text :
- https://doi.org/10.1109/led.2014.2320520