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Evaluating k-values for low-k materials after damascene integration: Method and results
- Source :
- Microelectronic Engineering. 88:651-655
- Publication Year :
- 2011
- Publisher :
- Elsevier BV, 2011.
-
Abstract
- This work discusses a method for measuring k-values of low-k films after integration in damascene structures. The experimental results are obtained from 90nm 1/2 pitch single damascene structures on low-k materials with intrinsic k-values ranging between 2.2 and 3. The measurement technique is discussed in detail with a focus on the accuracy, limitation of the method, impact of low-k damage and applicability for smaller dimensions.
- Subjects :
- Measurement method
Materials science
business.industry
Copper interconnect
Low-k dielectric
Ranging
Dielectric
Condensed Matter Physics
Capacitance
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Chemical-mechanical planarization
Optoelectronics
Electrical and Electronic Engineering
Focus (optics)
business
Subjects
Details
- ISSN :
- 01679317
- Volume :
- 88
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi...........82456dfb6e517e8925664e01f80c5ad6
- Full Text :
- https://doi.org/10.1016/j.mee.2010.06.012