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Evaluating k-values for low-k materials after damascene integration: Method and results

Authors :
Marianna Pantouvaki
Zs. Tokei
Ivan Ciofi
G. Beyer
B. Vereecke
Source :
Microelectronic Engineering. 88:651-655
Publication Year :
2011
Publisher :
Elsevier BV, 2011.

Abstract

This work discusses a method for measuring k-values of low-k films after integration in damascene structures. The experimental results are obtained from 90nm 1/2 pitch single damascene structures on low-k materials with intrinsic k-values ranging between 2.2 and 3. The measurement technique is discussed in detail with a focus on the accuracy, limitation of the method, impact of low-k damage and applicability for smaller dimensions.

Details

ISSN :
01679317
Volume :
88
Database :
OpenAIRE
Journal :
Microelectronic Engineering
Accession number :
edsair.doi...........82456dfb6e517e8925664e01f80c5ad6
Full Text :
https://doi.org/10.1016/j.mee.2010.06.012