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Mechanism of super steep subthreshold slope characteristics with body-tied SOI MOSFET

Mechanism of super steep subthreshold slope characteristics with body-tied SOI MOSFET

Authors :
Jiro Ida
Takayuki Mori
Source :
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Publication Year :
2013
Publisher :
IEEE, 2013.

Abstract

Super steep subthreshold slope characteristics in the FB and the BT are investigated with TCAD. The mechanism of the enhanced DIBL and the addition of the positive feedback PBT action by the forward biased emitter-base voltage are proposed to explain the difference between the FB and the BT.

Details

Database :
OpenAIRE
Journal :
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Accession number :
edsair.doi...........824eab039b0c7e78972562e31de3f33f
Full Text :
https://doi.org/10.1109/sispad.2013.6650584