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Mechanism of super steep subthreshold slope characteristics with body-tied SOI MOSFET
Mechanism of super steep subthreshold slope characteristics with body-tied SOI MOSFET
- Source :
- 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
- Publication Year :
- 2013
- Publisher :
- IEEE, 2013.
-
Abstract
- Super steep subthreshold slope characteristics in the FB and the BT are investigated with TCAD. The mechanism of the enhanced DIBL and the addition of the positive feedback PBT action by the forward biased emitter-base voltage are proposed to explain the difference between the FB and the BT.
Details
- Database :
- OpenAIRE
- Journal :
- 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
- Accession number :
- edsair.doi...........824eab039b0c7e78972562e31de3f33f
- Full Text :
- https://doi.org/10.1109/sispad.2013.6650584