Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches

Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies. An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications. We demonstrate the proton injection on SrCrO3 thin films via an efficient low-energy hydrogen plasma implantation experiments, without destroying the original lattice framework. Hydrogen ions accumulate largely at the interfacial regions with amorphous character which extend about one-third of the total thickness. The HxSrCrO3 (HSCO) thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure. Proton doping induces the change of Cr oxidation state from Cr4+ to Cr3+ in HSCO thin films and a transition from metallic to insulating phase. Our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.