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Wide Temperature Range Operation at 43Gbit/s of 1.55μm InGaAlAs Electroabsorption Modulated Laser with Single Active Layer

Authors :
Christophe Jany
D. Carpentier
J.-G. Provost
Fabrice Blache
Christophe Kazmierski
M.-C. Cuisin
F. Jorge
Agnieszka Konczykowska
Olivier Drisse
Alexandre Garreau
Jean Landreau
Jean Decobert
F. Martin
Estelle Derouin
N. Lagay
Source :
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.
Publication Year :
2007
Publisher :
IEEE, 2007.

Abstract

New self thermal compensated Single Active Layer AlGalnAs EML demonstrates 43 Gb/s open-eye operation for temperatures ranging between 10°C and 70°C. The dynamic extinction ratio over the whole temperature range was above 10 dB.

Details

Database :
OpenAIRE
Journal :
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials
Accession number :
edsair.doi...........82a0f9efe57747c19a07553e946126b4