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Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
- Source :
- Semiconductors. 50:1362-1368
- Publication Year :
- 2016
- Publisher :
- Pleiades Publishing Ltd, 2016.
-
Abstract
- The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current and remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.
- Subjects :
- media_common.quotation_subject
02 engineering and technology
Electron
01 natural sciences
Asymmetry
Electromagnetic radiation
law.invention
Depletion region
law
0103 physical sciences
Quantum well
media_common
010302 applied physics
Condensed matter physics
business.industry
Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Laser
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Optoelectronics
Quantum efficiency
Electric current
0210 nano-technology
business
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........831a1354542e84644812644a1aa9f9d1