Pure Silica Zeolite Films Prepared by a Vapor Phase Transport Method

Pure silica zeolite films were prepared by a vapor-phase transport method using ethylenediamine (EDA), triethylamine (Et3N), and water as vapor sources. The optimum mixture ratio of EDA:Et3N:H2O was 1:2:1 for forming randomly oriented ZSM-48 zeolite crystals. Compared with samples formed by the sol–gel technique and spin-coating method, the vapor-phase transport method can suppress isolated Si–OH bonds and film shrinkage. Dielectric constant decreased with increasing vapor-phase transport time, and leakage current decreased to an order of 10-8 A/cm2.