Cite
A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor
MLA
King-Poul Zhu, et al. “A New S-Shaped Switch Based on an InGaP/GaAs/InGaAs Step-Compositional-Emitter Heterojunction Bipolar Transistor.” The Fourth International Workshop on Junction Technology, 2004. IWJT ’04, June 2004. EBSCOhost, https://doi.org/10.1109/iwjt.2004.1306800.
APA
King-Poul Zhu, Jung-Hui Tsai, Shao-Yen Chiu, & Ying-Cheng Chu. (2004). A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor. The Fourth International Workshop on Junction Technology, 2004. IWJT ’04. https://doi.org/10.1109/iwjt.2004.1306800
Chicago
King-Poul Zhu, Jung-Hui Tsai, Shao-Yen Chiu, and Ying-Cheng Chu. 2004. “A New S-Shaped Switch Based on an InGaP/GaAs/InGaAs Step-Compositional-Emitter Heterojunction Bipolar Transistor.” The Fourth International Workshop on Junction Technology, 2004. IWJT ’04, June. doi:10.1109/iwjt.2004.1306800.