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Hopping conduction in a free‐standing GaAs‐AlGaAs heterostructure wire
- Source :
- Applied Physics Letters. 62:2533-2535
- Publication Year :
- 1993
- Publisher :
- AIP Publishing, 1993.
-
Abstract
- We report on the fabrication and electron transport in a novel heterostructure in which layers of AlGaAs and GaAs have been grown after a submicron free‐standing GaAs wire has been formed. Electronic conduction at low temperatures in this material is shown to be consistent with three‐dimensional hopping conduction with a transition to one‐dimensional hopping at temperatures below 1 K.
- Subjects :
- chemistry.chemical_classification
Materials science
Fabrication
Physics and Astronomy (miscellaneous)
business.industry
Quantum wire
Mineralogy
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Thermal conduction
Epitaxy
Condensed Matter::Materials Science
chemistry
Electrical resistivity and conductivity
Etching
Optoelectronics
business
Inorganic compound
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 62
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........8405efd3f9d41132806d4559aaf9e668
- Full Text :
- https://doi.org/10.1063/1.109287