Fin critical dimension loading control by different fin formation approaches for FinFETs process

FinFETs become dominant transistor architecture to replace planar metal-oxide-semiconductor field-effect transistors (MOSFETs) for larger effective channel width and better short channel controllability. Fin critical dimension (CD) of cross-fin direction is one of the most important parameters which impact MOSFET subthreshold swing and threshold voltage. However, CD loading between isolated and dense fins are naturally unavoidable in fin etch and STI filling process for different environments in these two areas. This paper mainly focuses on the fin formation process to give a demonstration of device performance and fin CD uniformity between different fin formation approaches.