Triethylgallium adsorption on Si(100) and Si(111) surfaces

Triethylgallium (TEG) adsorption on Si(100) 2×1 and Si(111) 7×7 surfaces was studied by reflection high‐energy electron diffraction (RHEED) and x‐ray photoelectron spectroscopy (XPS). At room temperature, TEG molecules nondissociatively adsorbed on Si surface. Being judged from the Ga 2P3/2 and C 1s peak height, TEG molecules dissociatively adsorbed and Ga was selectively deposited on Si surfaces at temperatures between 200 and 500 °C. At temperatures above 500 °C, Ga thermal desorption was observed. RHEED pattern showed the β‐SiC growth in this temperature range. Temperature dependence of the Ga 2P3/2 peak at Si(100) was different from that at Si(111), which strongly suggests that the surface dangling bond plays an important role in TEG dissociative adsorption.