Electrical Modeling and Characterization of Shield Differential Through-Silicon Vias

An equivalent-circuit model of shield differential through-silicon vias (SDTSVs) in 3-D integrated circuits (3-D ICs) is proposed in this paper. The proposed model is verified using the 3-D full-wave field solver High Frequency Simulator Structure, showing that it is highly accurate up to 100 GHz. Furthermore, a full-wave extraction method for the resistance–inductance–capacitance–conductance (RLCG) parameters of SDTSVs is also proposed in this paper, which can be applied to all of differential transmission lines. It is shown that the results of the RLCG parameters obtained from the full-wave extraction method agree well with that from the analytical calculation up to 100 GHz, further validating the accuracy of the proposed model. Finally, using the proposed model, a deep analysis of electrical characteristics of SDTSVs is carried out to provide helpful design guidelines for them in future 3-D ICs.