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Diode-End-Pumped Passively CW Mode-Locked Nd:YLF Laser by the LT-In<tex>$_0.25$</tex>Ga<tex>$_0.75$</tex>As Absorber

Authors :
Yu-E Hou
Yong-Gang Wang
Ya-Xian Fan
Xiao-Yu Ma
Hui-Tian Wang
Jing-Liang He
Shu-Di Pan
Source :
IEEE Journal of Quantum Electronics. 42:1097-1100
Publication Year :
2006
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2006.

Abstract

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75 As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ

Details

ISSN :
00189197
Volume :
42
Database :
OpenAIRE
Journal :
IEEE Journal of Quantum Electronics
Accession number :
edsair.doi...........8468fd7e2f3f011028175d746d0a33a7