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Mg-induced increase of band gap in Zn1−xMgxO nanorods revealed by x-ray absorption and emission spectroscopy

Authors :
J. W. Chiou
H. M. Tsai
C. W. Pao
Way-Faung Pong
C. H. Ko
Jyh-Fu Lee
F. Z. Chien
Jinghua Guo
Hua-Kuo Lin
Chin-Pei Chen
H. H. Chiang
M.-H. Tsai
Jih-Jen Wu
Source :
Journal of Applied Physics. 104:013709
Publication Year :
2008
Publisher :
AIP Publishing, 2008.

Abstract

X-ray absorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the effect of Mg doping in ZnO nanorods. The intensities of the features in the O K-edge XANES spectra of Zn{sub 1-x}Mg{sub x}O nanorods are lower than those of pure ZnO nanorods, suggesting that Mg doping increases the negative effective charge of O ions. XES and XANES spectra of O 2p states indicate that Mg doping raises (lowers) the conduction-band-minimum (valence-band-maximum) and increases the bandgap. The bandgap is found to increase linearly with the Mg content, as revealed by photoluminescence and combined XANES and XES measurements.

Details

ISSN :
10897550 and 00218979
Volume :
104
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........848877d15b585abccf426a72585615d6