Back to Search
Start Over
Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode
- Source :
- Semiconductors. 52:1809-1812
- Publication Year :
- 2018
- Publisher :
- Pleiades Publishing Ltd, 2018.
-
Abstract
- Nowadays modern science and technology require development of efficient electromagnetic emitters covering far GHz and THz ranges. Semiconductor elements with negative differential resistance (NDR) such as Gunn diodes based on GaAs and InP are well-established powerful microwave emitters. In this work the Gunn diode structure based on single GaN nanowire with the potential of THz device development was proposed and investigated both theoretically and experimentally. According to the results of the numerical modeling, the Gunn generation can be obtained in the proposed geometry. Dependence of the doping concentration on the NW length necessary for the electrons domain formation was obtained. The nanostructures were grown via molecular beam epitaxy technique. Contacts to single nanowires were fabricated with the combination of e-beam lithography and thermal evaporation. It was shown experimentally that the volt-ampere characteristics of the GaN nanowire structure possess current saturation region. Experimental results correspond well to proposed numerical model.
- Subjects :
- 010302 applied physics
Materials science
Terahertz radiation
business.industry
Doping
Nanowire
Physics::Optics
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
Semiconductor
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Microwave
Diode
Gunn diode
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........84ce7b1f15ae71a811197e0f175a158d