Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

MLA

C. Strobel, et al. “Towards High Frequency Heterojunction Transistors: Electrical Characterization of N-Doped Amorphous Silicon-Graphene Diodes.” Journal of Applied Physics, vol. 121, June 2017, p. 245302. EBSCOhost, https://doi.org/10.1063/1.4987147.

APA

C. Strobel, Matthias Albert, J. Kitzmann, Johann W. Bartha, G. Lupina, Carlos Alvarado Chavarin, & Ch. Wenger. (2017). Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes. Journal of Applied Physics, 121, 245302. https://doi.org/10.1063/1.4987147

Chicago

C. Strobel, Matthias Albert, J. Kitzmann, Johann W. Bartha, G. Lupina, Carlos Alvarado Chavarin, and Ch. Wenger. 2017. “Towards High Frequency Heterojunction Transistors: Electrical Characterization of N-Doped Amorphous Silicon-Graphene Diodes.” Journal of Applied Physics 121 (June): 245302. doi:10.1063/1.4987147.