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Modeling and Simulation Methodology for SOA-Aware Circuit Design in DC and Pulsed-Mode Operation of HV MOSFETs

Authors :
Sourabh Khandelwal
Thomas Gneiting
S. Sharma
Yogesh Singh Chauhan
Tor A. Fjeldly
Source :
IEEE Transactions on Electron Devices. 60:714-718
Publication Year :
2013
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2013.

Abstract

In this paper, we present a modeling and simulation methodology for safe-operating-area (SOA)-aware circuit design in dc and pulsed-mode operation of high-voltage MOSFETs (HV MOSFETs). The developed methodology gives an accurate description of the SOA of devices under dc and, more importantly, transient inputs, taking into account the width and duty-cycle of the pulse. To the best of the authors' knowledge, this is the first time such a methodology integrated with circuit design tools is presented. It is shown through simulation of standard circuits of HV MOSFETs that the proposed methodology avoids overdesigns and enables circuit designers to use the high-voltage technology to its full potential.

Details

ISSN :
15579646 and 00189383
Volume :
60
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi...........86582f48f08aa6146e48043c158a8fcb