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Gate Leakage and Reliability of GaN -Channel FET With SiNâ‚“/GaON Staggered Gate Stack
- Source :
- IEEE Electron Device Letters. 43:1822-1825
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 43
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........86c212d795c776343cced0cf0954a1a4