Characterization of silicon detectors with thin dead-layers on the n-side

Low energy electrons, alpha particles and X-rays has a short penetration depth in silicon. For detection of these types of radiation it is important that the detector has a shallow inactive region at the side which is irradiated. A series of shallow dead layer test detectors produced by n-side implantation of phosphorus, arsenic or antimony has been characterized. Leakage current levels in the range 2-5 nA/cm/sup 2/ were achieved with dead layers in the range 0.1-0.2 /spl mu/m. A silicon pixel detector which will be used in a hybrid photon detector has been produced with thin dead layer technology. The lower detection limit for electrons with this detector is 2.5 keV.