Modeling, Design, Assessment of a 0.4 $\mu{\hbox {m}}$ SiGe Bipolar VCSEL Driver IC Under $\gamma $-Radiation

Authors :: W. De Cock
Michel Steyaert
Paul Leroux
M. Van Uffelen
Source :: IEEE Transactions on Nuclear Science. 56:1920-1925
Publication Year :: 2009
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 2009.
Abstract: This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4 mum, which is part of the device library in a commercial 0.35 mum SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550 nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

Subjects :: Nuclear and High Energy Physics
Materials science
business.industry
Heterojunction bipolar transistor
Spice
Semiconductor device modeling
Integrated circuit design
Silicon-germanium
Vertical-cavity surface-emitting laser
chemistry.chemical_compound
Nuclear Energy and Engineering
CMOS
chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Common emitter

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