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6.4 A 180mW 56Gb/s DSP-Based Transceiver for High Density IOs in Data Center Switches in 7nm FinFET Technology

Authors :
Wei-Hao Tsai
Mazen Soliman
Ke-Chung Wu
Yi-Chieh Huang
Chien-Hua Wu
E-Hung Chen
Chen Huan-Sheng
Kai-Wen Tan
Chung-Shi Lin
Huang Shih-Hao
Kun-Hung Tsai
Weiyu Leng
Kuang-Ren Chen
Po-Shuan Weng
Tamer Ali
Ahmed ElShater
Chun-Cheng Liu
Henry Park
Ramy Yousry
Source :
ISSCC
Publication Year :
2019
Publisher :
IEEE, 2019.

Abstract

A soaring amount of data transfer has been witnessed in recent years. By 2020, 50 billion connected devices are expected, which will generate more than 2 zettabytes of data traffic annually. Given the constraints in power & space, this explosive growth puts high stress on network infrastructure, which demands low power, high BW, and area efficient transceivers. To improve BW efficiency, modern transceivers use PAM-4 instead of NRZ to double the throughput in the same BW. However, PAM-4 introduces substantial ISI, reduces peak-to-average-ratio, and imposes non-linearity constraints compared to NRZ modulation. Scaling in CMOS technology assisted the rise of DSP-based transceivers and digital equalization schemes to compensate PAM-4 non-idealities and achieve higher SNR at the receiver output [1–3].

Details

Database :
OpenAIRE
Journal :
2019 IEEE International Solid- State Circuits Conference - (ISSCC)
Accession number :
edsair.doi...........87758ce41d4f022c857b2d8990a647c9