Effect of bias dependence of substrate NPN transistor on total dose irradiation

Authors :: Yuan Liu
Ting Zhang
Bin Li
Yunfei En
He Yujuan
Source :: 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
Publication Year :: 2013
Publisher :: IEEE, 2013.
Abstract: In this paper, effect of bias dependence of substrate NPN (SNPN) transistors on total dose radiation is investigated. By considering of bulk field and fringing electric field in the oxide, the degradation mechanisms are discussed in numerical simulations. Experimental results show that the applied emitter voltage and the emitter-base junction bias play important roles in the total dose irradiation effect of SNPN transistors, which is agreement with the theoretical analysis.

Subjects :: Materials science
business.industry
Heterostructure-emitter bipolar transistor
Transistor
Bipolar junction transistor
Substrate (electronics)
equipment and supplies
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
law.invention
law
Electric field
Optoelectronics
Irradiation
business
Common emitter
Voltage

Database :: OpenAIRE
Journal :: 2013 IEEE International Conference of Electron Devices and Solid-state Circuits
Accession number :: edsair.doi...........8796579aa94a7952e444285afe4bed52
Full Text :: https://doi.org/10.1109/edssc.2013.6628043