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Horizontally aligned ZnO nanowire transistors using patterned graphene thin films

Authors :
Hwansoo Kim
Sanghyun Ju
Jihoon Park
Misook Suh
Joung Real Ahn
Source :
Applied Physics Letters. 100:063112
Publication Year :
2012
Publisher :
AIP Publishing, 2012.

Abstract

Here we report the directed growth of ZnO nanowires on multilayer graphene films (MGFs) without the use of metal seed materials. The ZnO source substance was diffused onto the MGF surface, where nanowires tended to grow in the high surface energy sites. This property was exploited to fabricate top-gate structural nanowire transistors with ZnO nanowires grown in the direction of the exposed sides of 6 × 4 μm patterned MGFs with a SiO2 capping layer. The devices showed an on-current of 160 nA, a threshold voltage of −2.27 V, an on-off current ratio of 3.98 × 105, and a field effect mobility of ∼41.32 cm2/V·s.

Details

ISSN :
10773118 and 00036951
Volume :
100
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........87b6dbe091e2ad2962d62778f37433b4
Full Text :
https://doi.org/10.1063/1.3684614