Cite
A sequential logic device realized by integration of in-plane gate transistors in InGaAs∕InP
MLA
Hongqi Xu, et al. “A Sequential Logic Device Realized by Integration of In-Plane Gate Transistors in InGaAs∕InP.” Applied Physics Letters, vol. 92, Jan. 2008, p. 012116. EBSCOhost, https://doi.org/10.1063/1.2825575.
APA
Hongqi Xu, Jie Sun, Ivan Maximov, Yuhui He, & Daniel Wallin. (2008). A sequential logic device realized by integration of in-plane gate transistors in InGaAs∕InP. Applied Physics Letters, 92, 012116. https://doi.org/10.1063/1.2825575
Chicago
Hongqi Xu, Jie Sun, Ivan Maximov, Yuhui He, and Daniel Wallin. 2008. “A Sequential Logic Device Realized by Integration of In-Plane Gate Transistors in InGaAs∕InP.” Applied Physics Letters 92 (January): 012116. doi:10.1063/1.2825575.