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Stoichiometry dependent changes in the optical properties and nanoscale track formation of PECVD grown a-SiNx:H thin films upon 100 MeV Au8+ ion irradiation
- Source :
- Current Applied Physics. 24:1-6
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- a-SiNx:H thin films of different stoichiometry grown by PECVD were subjected to irradiation by 100 MeV Au8+ ions with various fluences to understand the effect of stoichiometry on properties of thin films upon irradiation. Ellipsometry and UV–Vis study suggest the variation in the refractive index of thin films with fluence. The evolution of Hydrogen due to irradiation is quantified with the help of ERDA. RBS was probed to study the change in thin films' composition upon irradiation, which further helps understand the change in thin films' optical properties. Quenching of photoluminescence in the films with all stoichiometries was also observed due to ion irradiation. X-TEM images show the formation of discontinuous ion tracks of radius 2.5 nm in the film closer to silicon nitride stoichiometry. However, Si rich film does not show the clear formation of tracks. Results are explained in the framework of the Thermal spike mechanism of ion-solid interaction.
- Subjects :
- 010302 applied physics
Photoluminescence
Materials science
Ion track
Analytical chemistry
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Fluence
chemistry.chemical_compound
Silicon nitride
chemistry
Ellipsometry
Plasma-enhanced chemical vapor deposition
0103 physical sciences
General Materials Science
sense organs
Irradiation
Thin film
0210 nano-technology
Subjects
Details
- ISSN :
- 15671739
- Volume :
- 24
- Database :
- OpenAIRE
- Journal :
- Current Applied Physics
- Accession number :
- edsair.doi...........87d8f930e28a73020df7186fd0ff2e46