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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
- Source :
- Applied Physics Letters. 111:242901
- Publication Year :
- 2017
- Publisher :
- AIP Publishing, 2017.
-
Abstract
- We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm2) and a low FE saturation voltage (∼1.5 V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90 nm. The TiN films are deposited at room temperature and annealed at 400 °C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Annealing (metallurgy)
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Ferroelectricity
law.invention
Atomic layer deposition
chemistry
law
0103 physical sciences
Orthorhombic crystal system
Crystallization
Thin film
0210 nano-technology
Tin
Monoclinic crystal system
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 111
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........88f0ddc7ec550054cb63e676531bffd2
- Full Text :
- https://doi.org/10.1063/1.4995619