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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Authors :
Si Joon Kim
Antonio T. Lucero
Dushyant Narayan
Joy S. Lee
Chadwin D. Young
Scott R. Summerfelt
Jiyoung Kim
Tamer San
Luigi Colombo
Jaidah Mohan
Jaebeom Lee
Jae-Gil Lee
Young-Chul Byun
Harrison Sejoon Kim
Source :
Applied Physics Letters. 111:242901
Publication Year :
2017
Publisher :
AIP Publishing, 2017.

Abstract

We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm2) and a low FE saturation voltage (∼1.5 V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90 nm. The TiN films are deposited at room temperature and annealed at 400 °C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures.

Details

ISSN :
10773118 and 00036951
Volume :
111
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........88f0ddc7ec550054cb63e676531bffd2
Full Text :
https://doi.org/10.1063/1.4995619