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Conductance of individual channels in a carbon nanotube field-effect transistor studied by magnetic force microscopy
- Source :
- Journal of Applied Physics. 106:114315
- Publication Year :
- 2009
- Publisher :
- AIP Publishing, 2009.
-
Abstract
- We observed current-induced magnetic fields using magnetic force microscopy (MFM) to investigate the channel properties of carbon nanotube field-effect transistors (CNT-FETs). We first modified the shape of a MFM cantilever to enhance its response to magnetic force and then observed the MFM signals around individual CNT channels. We demonstrated that the MFM observations are quite appropriate for studying the CNT channel properties. We also found differences in the threshold gate bias and transconductance among different CNT channels and in the asymmetric conductance of a single CNT channel.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 106
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........88f255d4609c1ef1c0016cd1b5c368c6