Band gap and gate metal engineering of novel hetero-material InAs/GaAs-based JLTFET for improved wireless applications

MLA

Samriti Sharma, and Rishu Chaujar. “Band Gap and Gate Metal Engineering of Novel Hetero-Material InAs/GaAs-Based JLTFET for Improved Wireless Applications.” Journal of Materials Science: Materials in Electronics, vol. 32, Jan. 2021, pp. 3155–66. EBSCOhost, https://doi.org/10.1007/s10854-020-05064-1.

APA

Samriti Sharma, & Rishu Chaujar. (2021). Band gap and gate metal engineering of novel hetero-material InAs/GaAs-based JLTFET for improved wireless applications. Journal of Materials Science: Materials in Electronics, 32, 3155–3166. https://doi.org/10.1007/s10854-020-05064-1

Chicago

Samriti Sharma, and Rishu Chaujar. 2021. “Band Gap and Gate Metal Engineering of Novel Hetero-Material InAs/GaAs-Based JLTFET for Improved Wireless Applications.” Journal of Materials Science: Materials in Electronics 32 (January): 3155–66. doi:10.1007/s10854-020-05064-1.