Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

MLA

James C. Gallagher, et al. “Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation.” IEEE Transactions on Semiconductor Manufacturing, vol. 32, Nov. 2019, pp. 478–82. EBSCOhost, https://doi.org/10.1109/tsm.2019.2932272.

APA

James C. Gallagher, Michael A. Mastro, Boris N. Feigelson, Travis J. Anderson, G. M. Foster, Andrew D. Koehler, Alan G. Jacobs, Jennifer K. Hite, Karl D. Hobart, & Francis J. Kub. (2019). Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation. IEEE Transactions on Semiconductor Manufacturing, 32, 478–482. https://doi.org/10.1109/tsm.2019.2932272

Chicago

James C. Gallagher, Michael A. Mastro, Boris N. Feigelson, Travis J. Anderson, G. M. Foster, Andrew D. Koehler, Alan G. Jacobs, Jennifer K. Hite, Karl D. Hobart, and Francis J. Kub. 2019. “Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation.” IEEE Transactions on Semiconductor Manufacturing 32 (November): 478–82. doi:10.1109/tsm.2019.2932272.