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Effects of PECVD SiO₂ Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs

Authors :
Su-Keun Eom
Kwang-k Seo
Sang-Woo Han
Hyun-Seop Kim
Won-Ho Jang
Ho-Young Cha
Chun-Hyung Cho
Hyungtak Kim
Source :
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 18:187-192
Publication Year :
2018
Publisher :
The Institute of Electronics Engineers of Korea, 2018.

Subjects

Subjects :
010302 applied physics
Materials science
business.industry
Gate dielectric
Algan gan
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
Plasma-enhanced chemical vapor deposition
0103 physical sciences
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business

Details

ISSN :
22334866 and 15981657
Volume :
18
Database :
OpenAIRE
Journal :
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Accession number :
edsair.doi...........89c2f8155b29f3601e22fedfa886680c
Full Text :
https://doi.org/10.5573/jsts.2018.18.2.187
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